束晕-混沌的复杂性理论与控制方法及其应用前景

本文系统论述涉及强流加速器等强流离子束装置中产生的束晕-混沌的复杂性理论与控制方法及其应用前景。强流离子束在核材料生产与增殖、洁净核能、放射性废物嬗变、放射性药物生产、重离子聚变、高能物理、核科学与工程、国防与民用工业和医疗等许多方面都有极其重要的应用潜力和诱人的发展前景。尤其是，近年来强流加速器驱动的放射性洁净核能系统是国内外关注的热门课题，因为它比常规核电更安全、更干净、更便宜。但是，强流离子束形成的束晕-混沌的复杂性现象已引起了国内外广泛关注，需要加以抑制、控制和消除这类现象，解决这一难题已经成为强流离子束应用中的关键问题之一。目前不仅必须深入研究这类束晕-混沌的复杂特性及其产生的物理机制，而且需要研究如何实现对束晕-混沌的有效控制，并寻求和发展其新理论、新方法和新技术。这就向强流离子束物理和非线性-复杂性科学及其技术提出了一系列极富挑战性的新课题。本文结合国内外的研究概况，根据我们多年来的研究成果，特别是我们首创性地提出了一些束晕-混沌的有效控制方法，它们包括：非线性反馈控制法，小波反馈控制法，变结构控制法，延迟反馈控制法，参数自适应控制法等，进行重点的介绍。对上述课题当前的主要进展及相关问题进行系统的总结和比较全面综述的评论。最后，指出该领域今后的研究方向，以推动这个崭新领域的深入研究和应用发展。     

浮栅ROM器件辐射效应机理分析

分析了浮栅ROM器件的辐射效应机理，合理地解释了实验中观察到的现象.指出辐射产生的电子空穴对在器件中形成的氧化物陷阱电荷和界面陷阱电荷是导致存储单元及其外围电路出现错误的原因.浮栅ROM器件的中子、质子和⁶⁰Co γ辐射效应都是总剂量效应 . 关键词： FLASH ROM EEPROM 中子 质子 60Co γ')" href="#">⁶⁰Co γ 总剂量效应     

半导体带电粒子探测器的研制及其在空间物理中的应用

阐述了空间辐射环境监测的意义,描述了半导体带电粒子探测器的研制及由其组成的望远镜系统在空间物理中的应用,并给出了用此探测器在卫星上进行地球辐射环境监测、太阳质子事件和地磁暴探测的部分结果.     

Sulfonated poly(aryl ether ketone)s containing naphthalene moieties obtained by direct copolymerization as novel polymers for proton exchange membranes

A series of sulfonated poly(aryl ether ketone)s (SPAEKs) were prepared by aromatic nucleophilic polycondensation of 2,6‐dihydroxynaphthalene with 5,5′‐carbonyl‐bis(2‐fluorobenzenesulfonate) and 4,4′‐difluorobenzophenone. The structure and degree of sulfonation (DS) of the SPAEKs were characterized using ¹H NMR spectroscopy. The experimentally observed DS values were close to the expected values derived from the starting material ratios. The thermal stabilities of the SPAEKs were characterized by thermogravimetric analysis, which showed that in acid and sodium salt forms they were thermally stable in air up to about 240 and 380 °C, respectively. Transparent membranes cast from the directly polymerized SPAEKs exhibited good mechanical properties in both dry and hydrated states. The dependence of water uptake and of membrane swelling on the DS at different temperatures was studied. SPAEK membranes with a DS from 0.72 to 1.60 maintained adequate mechanical properties after immersion in water at 80 °C for 24 h. The proton conductivity of SPAEK membranes with different degrees of sulfonation was measured as a function of temperature. The proton conductivity of the SPAEK films increased with increased DS, and the highest room temperature conductivity (4.2 × 10^?2 S/cm) was recorded for a SPAEK membrane with a DS of 1.60, which further increased to 1.1 × 10^?1 S/cm at 80 °C. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 2866–2876, 2004     

修饰态布居的选择性激发对无反转激光的作用

以三能级V型系统为例研究修饰态布居的选择性激发对无反转激光增益的作用. 当非 相干驱动场的频谱宽度远小于驱动场产生的修饰态能级的间距时，非相干驱动场只将一个修 饰态的布居抽运至激发态. 借助原子的衰减通道，系统中形成单向布居转移通道，从而建立 修饰态布居的选择性激发. 利用修饰态布居的选择性激发，可以摆脱裸态共振无反转激光的 三个限制: (1) 不再要求辅助的低频驱动跃迁比高频激光跃迁具有更高的衰减速率；(2) 显 著降低非相干激发速率的阈值；(3) 无反转激光的线性增益不再反比于相干驱动场的强 关键词： 修饰态布居的选择性激发 无反转激光增益 原子衰减速率 非相干激发阈值速率     

Pr(0.5):ZBLAN的双频激发上转换发光的研究

报道了Pr(0.5):ZBLAN玻璃在双频双光束光源激发下的激发态上转换现象.发现上转换发射谱的荧光与常规荧光发射谱的荧光一致，还发现双频激发下的上转换激发谱有3个明显的谱峰，它们依此对应于788.5nm 1G4→3P2,850.5nm 1G4→1I6和805.0nm 3H6→1D2的激发态吸收跃迁，而大的850.5nm上转换激发谱峰是由大的1G4(Pr3+ )→1I6(Pr3+)跃迁的振子强度f=23.04×10-6所致.这说明起源于1G4能级的激发态吸收上转换尤其1G4(Pr3+)→1I6(Pr3+)     

Yb:FAP和Yb:C_3S_2-FAP晶体光谱的温度特性和选择激发

报导了Yb :FAP和Yb :C3S2 _FAP晶体在不同温度下的吸收光谱和荧光光谱实验结果 ,研究发现由于电子_声子近共振耦合作用 ,Yb :FAP和Yb :C3S2 _FAP晶体均存在有明显的振动谱 ,Yb :FAP晶体的零声子线在低温下还劈裂为相差 10cm- 1 的两条线 .采用激光选择激发技术研究了Yb3 离子在FAP和C3S2 _FAP晶体中的格位特征 ,结果表明Yb3 离子在这两种基质中都只占据Ca(Ⅱ )格位 ,但由于CaF2 的挥发 ,导致了Ca(Ⅱ )格位的局部畸变 .     

类铜离子的电子碰撞参数及其规律

用准相对论扭曲波方法系统地计算了Ｂａ、Ｎｄ、Ｇｄ、Ｙｂ、Ａｕ、Ｐｂ类铜离子组态能级之间的电子碰撞激发强度Ω（ｎｌ－ｎｌ），３≤ｎ≤７，４≤ｎ≤７，同时给出了高能极限的碰撞强度和外推到阈值的碰撞强度，用最小二乘样条方法拟合了全能域碰撞强度及热平均速率系数。对于一个激发过程，用１０个参数可以得到碰撞电子在任意能量下的碰撞强度以及任意温度下的速率系数。     

The effect of complexing processes on energy transfer Tl+→Gd3+ and Tl+→Tb3+ in glass

T. Shevchenko Kiev University, 252022 Kiev, Pr. Akad. Glushakova, 6, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 62, No. 3, pp. 192–196, May–June, 1995.     

Novel UV‐induced photografting process for preparing poly(tetrafluoroethylene)‐based proton‐conducting membranes

A novel process comprising the UV‐induced photografting of styrene into poly(tetrafluoroethylene) (PTFE) films and subsequent sulfonation has been developed for preparing proton‐conducting membranes. Although under UV irradiation the initial radicals were mainly generated on the surface of the PTFE films by the action of photosensitizers such as xanthone and benzoyl peroxide, the graft chains were readily propagated into the PTFE films. The sulfonation of the grafted films was performed in a chlorosulfonic acid solution. Fourier transform infrared and scanning electron microscopy were used to characterize the grafted and sulfonated membranes. With a view to use in fuel cells, the proton conductivity, water uptake, and mechanical properties of the prepared membranes were measured. Even through the degree of grafting was lower than 10%, the proton conductivity in the thickness direction of the newly prepared membranes could reach a value similar to that of a Nafion membrane. In comparison with γ‐ray radiation grafting, UV‐induced photografting is very simple and safe and is less damaging to the membranes because significant degradation of the PTFE main chains can be avoided. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 2624–2637, 2007